DOUBLE GATE NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING

摘要

The present invention relates to a non- volatile memory device on a substrate layer comprising semiconductor source and drain regions, a semiconductor channel region, a charge storage stack and a control gate; the channel region being fin-shaped having two sidewall portions and a top portion, and extending between the source region and the drain region; the charge storage stack being positioned between the source and drain regions and extending over the fin-shaped channel, substantially perpendicularly to the length direction of the fin- shaped channel; the control gate being in contact with the charge storage stack, wherein - an access gate is provided adjacent to one sidewall portion and separated therefrom by an intermediate gate oxide layer, and - the charge storage stack contacts the fin-shaped channel on the other sidewall portion and is separated from the channel by the intermediate gate oxide layer.