发明名称 |
METHOD FOR STRIPPING PHOTORESIST FROM ETCHED WAFER |
摘要 |
<p>A method of forming a feature in a low-k (k<3.0) dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A stripping gas comprising CO<SUB>2 </SUB>is provided. A plasma is formed from the stripping gas comprising CO<SUB>2</SUB>. The plasma from the stripping gas comprising CO<SUB>2 </SUB>is used to strip the patterned photoresist mask.</p> |
申请公布号 |
KR20070037647(A) |
申请公布日期 |
2007.04.05 |
申请号 |
KR20077004233 |
申请日期 |
2005.07.20 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
HUDSON ERIC A.;CIRIGLIANO PETER |
分类号 |
H01L21/311;G03F7/42;H01L21/027 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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