SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE USING IT, ITS MANUFACTURING METHOD, SOLID STATE IMAGING DEVICE, ITS MANUFACTURING METHOD, AND IMAGING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate, semiconductor device, and solid state imaging device capable of preventing deterioration in device performance by avoiding the metal contamination in a thin-film of an element formation layer and of improving the uniformity of the thickness of the element formation layer.

SOLUTION: The semiconductor substrate 10 of the semiconductor device and solid state imaging device is configured to have an element formation layer 11 and thin film removal layer 12 that is laminated on one surface of the element formation layer 11 and serves as reinforcement for the element formation layer 11. Then, a gettering layer 13 is arranged between the element formation layer 11 and thin film removal layer 12. After the device is formed on the element formation layer 11, the thin film removal layer 12 is removed, and the semiconductor substrate 10 becomes a thin film shape. Meanwhile, in the semiconductor substrate 10 of the solid state imaging device, a hole-accumulating layer 14 is arranged so that it may cover the gettering layer 13 on the surface of the element formation layer 11 that contacts the gettering layer 13.

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