| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element in which strength characteristics of a supporting substrate is excellent, reflection light from the supporting substrate is little, and light take-out efficiency is enhanced, and to provide its fabrication process. <P>SOLUTION: In a structure where at least an n-type semiconductor layer 103, a light emitting layer 104, a p-type semiconductor layer 105, metal film layers 108 and 109, and a plating metal plate 110 are formed in this order, the metal film layers and the plating metal plate are formed partially on the p-type semiconductor layer, and a translucent substance layer 114 is formed in a part on the p-type semiconductor layer where the metal film layers and the plating metal plate are not formed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
