| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which can reduce an opposing capacity accompanied between actual wirings formed in the same wiring layer while flattening among the wirings is realized. SOLUTION: The semiconductor integrated circuit device has a multilayer wiring structure. Actual wirings L1 and L2 as a signal transmitting route, and linearly formed dummy patterns D1 and D2 non-parallel to the actual wirings L1 and L2, are formed in each of the wiring layers. The dummy patterns D1 and D2 of the respective layers that are respectively formed on the vertically adjoining wiring layers are non-parallel to each other. COPYRIGHT: (C)2007,JPO&INPIT
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