| 摘要 |
A storage element includes a storage layer which holds information based on a magnetization state of a magnetic body, an upper pinned magnetic layer disposed above the storage layer with an upper intermediate layer therebetween, and a lower pinned magnetic layer disposed below the storage layer with a lower intermediate layer therebetween, wherein one of the upper intermediate layer and the lower intermediate layer is an insulating layer which forms a tunnel barrier, the other intermediate layer is a laminate including an insulating layer and a nonmagnetic conductive layer, and the magnetization direction of the storage layer is varied by passing a current through the storage element in the lamination direction to enable recording of information on the storage layer.
|
