SEMICONDUCTOR DEVICE INCLUDING A FRONT SIDE STRAINED SUPERLATTICE LAYER AND A BACK SIDE STRESS LAYER AND ASSOCIATED METHODS

摘要

A semiconductor device may include a semiconductor substrate having front and back surfaces, a strained superlattice layer adjacent the front surface of the semiconductor substrate and comprising a plurality of stacked groups of layers, and a stress layer on the back surface of the substrate and comprising a material different than the semiconductor substrate. Each group of layers of the strained superlattice layer may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non- semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.