发明名称 |
SOLARZELLE MIT BACK-SURFACE-FIELD UND VERFAHREN ZUR HERSTELLUNG |
摘要 |
For the simple production of a back surface field it is proposed that a boron-containing diffusion source layer (2) be applied to the rear (RS) of a silicon wafer (1) and boron be driven into the wafer to a depth of about 1 to 5 mu m at 900 to 1200 DEG C. This is done in an oxygen-containing atmosphere so that an oxide layer (4) is formed on open silicon surfaces, obviating the need to mask the regions not to be doped. After the removal of the oxide and source layer, phosphorus diffusion takes place and the back contact (3) is produced. It contains aluminum and, during the burn-in process, provides good ohmic contact. |
申请公布号 |
DE59611419(D1) |
申请公布日期 |
2007.04.05 |
申请号 |
DE1996511419 |
申请日期 |
1996.03.07 |
申请人 |
SHELL SOLAR GMBH |
发明人 |
SCHLOSSER, REINHOLD;MUENZER, ADOLF |
分类号 |
H01L31/04;H01L31/18;H01L31/0288;H01L31/068 |
主分类号 |
H01L31/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|