| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a page buffer of a NAND type flash memory device in which two pages can be programmed through one programming operation. <P>SOLUTION: The page buffer of the flash memory device is provided with: a first bit line selection unit that selects any one of the first bit lines connected to a memory cell array and connects it to a first sensing line; a second bit line selection unit that selects any one of the second bit lines connected to the memory cell array and connecting it to a second sensing line; a separation unit that separates or connects the first sensing line to the second sensing line; a pre-charge unit that precharges the first sensing line and the second sensing line; a first register connected to the first bit line selection unit through the first sensing line, for latching input data; a second register connected to the second bit line selection unit through the second sensing line, for latching input data. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
