| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an aqueous polishing slurry having a high CMP rate and less scratch and dishing, and enabling fabrication of an LSI having improved flatness, and to provide a chemical mechanical polishing method employing the aqueous polishing slurry. <P>SOLUTION: The aqueous polishing slurry contains an oxidant, a 5-membered ring single-ring compound having three or more nitrogen atoms or a compound in which a complex ring is condensed into this compound, and a compound having at least two sulfur atoms in each molecular and/or an organic compound containing bromine or iodine. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
