| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing liquid for a metal and a chemical mechanical polishing method capable of providing both the satisfactory in-plane uniformity and few scratch. <P>SOLUTION: The time required to reach an oxidation reaction rate of (E1+E2)/2 of the polishing liquid for the metal including an oxidant and a heteroaromatic ring compound is less than 1.0 second where the oxidation reaction rate immediately after the starting of the oxidation of the surface of the metal to be polished is E1, and the oxidation reaction rate at the time of reaching the steady-state of the oxidation reaction is E2. The polishing is conducted by contacting the polishing liquid for the metal to the surface to be polished, and relatively moving the surface to be polished to the polishing liquid and/or a polishing pad. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
