发明名称 SUBSTRATE TREATING DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate treatment capable of raising uniform heating in a substrate, uniforming an in-plane temperature distribution in the substrate treatment, and raising the uniformity of thickness in depositing a film. SOLUTION: A substrate treating device includes a treatment chamber 41 for treating the substrate 3, a support board 50 for supporting the substrate 3 inside the treatment chamber 41, and a heater 76 for heating the substrate 3 in the treatment chamber 41. A plurality of projections are arranged on the upper surface of the support board 50, and arrayed in a grid shape. The flatness of the upper surface of the support board is≤0.015 mm in a circumferential direction and≤0.025 mm in a radial direction. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007088176(A) 申请公布日期 2007.04.05
申请号 JP20050274405 申请日期 2005.09.21
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YONEBAYASHI MASAHIRO;SUEYOSHI MAMORU;HIROSE YOSHIRO;KAMAKURA TSUKASA;AKAE HISANORI
分类号 H01L21/205;H01L21/683 主分类号 H01L21/205
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