SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technology which can discharge a hole produced near a drain area in an early stage when a surge voltage etc. is applied. SOLUTION: A semiconductor device 10 has a p+-type semiconductor area 41 which is a part of a surface portion of a semiconductor active layer 24 and is formed near a drain area 42. The p+-type semiconductor area 41 is separated from a body area 48 and semiconductor substrate 22 by the semiconductor active layer 24, and is electrically connected with a drain electrode D. Moreover, the semiconductor device 10 has a conductive area 32 which is opposed to a portion of the semiconductor active layer 24 existing between the p+-type semiconductor area 41 and semiconductor substrate 22 through an insulating film 34. A grounding voltage is applied to the conductive area 32. COPYRIGHT: (C)2007,JPO&INPIT