| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inductive coupling plasma processing apparatus capable of suppressing a bent of a partition structure for partitioning between a processing chamber and an antenna chamber including a dielectric wall without the need for upsizing a support part of the dielectric wall and thickening the dielectric wall. <P>SOLUTION: The inductive coupling plasma processing apparatus is configured with: the processing chamber 4 for applying plasma processing to a substrate G; a processing gas supply system 20 for supplying a processing gas into the processing chamber 4; an exhaust system 30 for exhausting inside the processing chamber 4; the dielectric wall 2 for configuring an upper wall of the processing chamber 4; a high frequency antenna 15 provided above the dielectric wall 2; the antenna chamber 3 provided above the processing chamber 4, the bottom wall of which is formed by the dielectric wall 2, and containing the high frequency antenna 15; and a vertical wall 5 for partitioning the antenna chamber 3 into a plurality of small chambers 6, supported by a side wall 3a of the antenna chamber 3 and made of aluminum or an aluminum alloy subjected to anodizing processing. <P>COPYRIGHT: (C)2007,JPO&INPIT |
