发明名称 |
METHOD OF ACCELERATING TEST OF SEMICONDUCTOR DEVICE |
摘要 |
Semiconductor elements composing a semiconductor device are formed on a semiconductor substrate. Wirings composed of copper or an alloy mainly composed of copper are formed in wiring layers through interlayer insulation films to connect the semiconductor elements to each other. When the wirings are formed, a temperature of the wirings is held in a first temperature zone covering ±40° C. of a temperature at which a stress migration is most accelerated.
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申请公布号 |
US2007077762(A1) |
申请公布日期 |
2007.04.05 |
申请号 |
US20060561293 |
申请日期 |
2006.11.17 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YOSHIDA KENJI;NAKAZAWA HIROSHI;FUJIMAKI TAKESHI;MIYAMOTO KOJI |
分类号 |
G01R31/30;H01L21/44;G01R31/28 |
主分类号 |
G01R31/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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