发明名称 |
High performance device design |
摘要 |
A semiconductor structure having a recessed active region and a method for forming the same are provided. The semiconductor structure comprises a first and a second isolation structure having an active region therebetween. The first and second isolation structures have sidewalls with a tilt angle of substantially less than 90 degrees. The active region is recessed. By recessing the active region, the channel width is increased and device drive current is improved.
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申请公布号 |
US2007075377(A1) |
申请公布日期 |
2007.04.05 |
申请号 |
US20050243959 |
申请日期 |
2005.10.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG CHIEN-CHAO;YANG FU-LIANG |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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