SEMICONDUCTOR DEVICE AND ITS FABRICATION METHOD

摘要

A first film comprising SiGe is formed on a support substrate, at least the surface layer portion of which is formed of Si. A gate electrode is formed on a part of the region of the first film, and a source region and a drain region are formed in the surface layer portion of the support substrate on both sides of the gate electrode. The gate electrode, the source region, and the drain region constitute a first field effect transistor. A first stressor in which a compression stress or a tensile stress is accumulated is formed on the first film on both sides of the gate electrode of the first field effect transistor. A strain is generated in the channel region by the first stressor.