| 发明名称 |
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE |
| 摘要 |
A method of fabricating a HI-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods. |
| 申请公布号 |
US2007077714(A1) |
申请公布日期 |
2007.04.05 |
| 申请号 |
US20060534855 |
申请日期 |
2006.09.25 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
BEACH ROBERT;BRIDGER PAUL;BRIERE MICHAEL A. |
| 分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
| 代理机构 |
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