Production of an integrated semiconductor circuit arrangement comprises forming a semiconductor circuit with first type field effect transistors and forming lateral edge regions to protect the gate insulation below the gate electrodes

摘要

Production of an integrated semiconductor circuit arrangement (10) comprises forming a semiconductor circuit (30) with first type field effect transistors (T1) each having a first lateral gate insulation (GOX1) and a first lateral gate electrode (G1) arranged over the gate insulation and forming lateral edge regions with spacer elements (40s) to protect the gate insulation below the gate electrodes. The spacer elements are formed by producing a material layer, implanting the spacer elements and selectively etching the material layer so that lateral regions of the material layer are removed and the remainder of the material layer remains on the lateral edge regions. An independent claim is also included for an integrated semiconductor circuit arrangement produced by the above process.