发明名称 |
METHOD FOR PRODUCING GROUP 3-5 NITRIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE |
摘要 |
<p>Disclosed are a method for producing a group 3-5 nitride semiconductor and a method for manufacturing a light-emitting device. The method for producing a group 3-5 nitride semiconductor comprises the steps (i), (ii) and (iii) described below in this order. The method for manufacturing a light-emitting device comprises the steps (i), (ii), (iii) and (iv) described below in this order. The steps are (i) a step for arranging inorganic particles on a substrate; (ii) a step for growing a semiconductor layer; (iii) a step for separating the semiconductor layer from the substrate by irradiating light between the substrate and the semiconductor layer; and (iv) a step for forming an electrode.</p> |
申请公布号 |
WO2007037504(A1) |
申请公布日期 |
2007.04.05 |
申请号 |
WO2006JP319822 |
申请日期 |
2006.09.27 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED;YAMANAKA, SADANORI;UEDA, KAZUMASA;TSUCHIDA, YOSHIHIKO |
发明人 |
YAMANAKA, SADANORI;UEDA, KAZUMASA;TSUCHIDA, YOSHIHIKO |
分类号 |
C23C16/34;H01L21/20;H01L21/205;H01L33/00 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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