| 摘要 |
PROBLEM TO BE SOLVED: To form a highly crystalline silicon film on a substrate having an insulating surface by using metal elements that promote the crystallization of silicon, and performing heat treatment at high temperature in order to obtain the crystalline silicon film. SOLUTION: A silicon oxide film 102 and an amorphous silicon film 103 are formed on a quartz substrate 101 in this order. The surface of the amorphous silicon film 103 is held in contact with nickel elements, and heat treatment is performed at a temperature of 800-1100 deg.C to reform the amorphous silicon film 103 into a crystalline silicon film 106. This makes it possible to obtain the crystalline silicon film 106 in as short a time as four hours or so, and provides the crystalline silicon film 106 with high crystallinity. That makes it possible to disperse in the film, the nickel elements that contributed to the promotion of crystallization, and prevents a high-density trap level from being locally formed. |
