发明名称 |
Switching structure and method of fabrication |
摘要 |
<p>A switch structure having a base surface; a first high density interconnect (HDI) plastic interconnect layer overlying the base surface layer; a cavity within the HDI plastic interconnect layer; at least one patterned shape memory alloy (SMA) layer overlying the HDI plastic interconnect layer and the cavity, and at least one patterned conductive layer over the at least one patterned SMA layer; a fixed contact pad within the cavity and attached to the base surface and a movable contact pad attached to a portion of the first patterned SMA layer within the cavity such that when the first and second patterned SMA layers and the first and second patterned metallized layers are in a first stable position, the movable contact pad touches the fixed contact pad, thereby providing an electrical connection and forming a closed switch. The structure has a second stable position in which the SMA and metallized layers are flexed away from the cavity so that the contact pads are not in contact and form an open switch. <IMAGE></p> |
申请公布号 |
EP1001440(B1) |
申请公布日期 |
2007.04.04 |
申请号 |
EP19990309020 |
申请日期 |
1999.11.12 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
KORNRUMPF, WILLIAM PAUL;WOJNAROWSKI, ROBERT JOHN |
分类号 |
B81B3/00;H01H1/00;B81C1/00;H01H37/32;H01H59/00;H01H61/00;H01H61/01 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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