STRAINED SILICON-ON-INSULATOR BY ANODIZATION OF A BURIED P+ SILICON GERMANUM LAYER,申请号KR20077000058-传众专利搜索

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发明名称	STRAINED SILICON-ON-INSULATOR BY ANODIZATION OF A BURIED P+ SILICON GERMANUM LAYER
摘要
申请公布号	KR20070037483(A)	申请公布日期	2007.04.04
申请号	KR20077000058	申请日期	2005.05.27
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	ADAM THOMAS N;BEDELL STEPHEN W.;DE SOUZA JOEL P.;FOGEL KEITH E.;REZNICEK ALEXANDER;SADANA DEVENDRA K.;SHAHIDI GHAVAM
分类号	H01L27/12;H01L21/20;H01L21/762	主分类号	H01L27/12
代理机构		代理人
主权项
地址

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