Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices

摘要

A vertical MOSFET transistor, formed in a body (13) of semiconductor material having a surface and housing a buried conductive region (19) of a first conductivity type; a channel region (29) of a second conductivity type, arranged on top of the buried conductive region; a surface conductive region (26, 35c) of the first conductivity type, arranged on top of the channel region (29) and the buried conductive region (19); a gate insulation region (22), extending at the sides of and contiguous to the channel region (29); and a gate region (23, 35d) extending at the sides of and contiguous to the gate insulation region (22).