| 摘要 |
In a device for passive stabilization of voltage supplies of a semiconductor element, regions made of a second conductivity type are embedded in a first layer of a first conductivity type within lateral regions, which are used for the wiring of standard cells of components. Barrier layers whose capacitances are used for supporting supply voltages are formed on the boundary surfaces. For this purpose, the regions of the second conductivity type are connected either to first substrate of the same conductivity type or to troughs within standard cells, which have the second conductivity type. |
