| 摘要 |
PROBLEM TO BE SOLVED: To provide a device and method for plasma treatment by which the occurrence of failures can be prevented by holding a semiconductor substrate with sufficient electrostatic holding power. SOLUTION: In the plasma treatment device which performs plasma treatment on a silicon wafer 6 while a protective tape 6a is stuck to the circuit forming surface of the wafer 6, the wafer 6 is placed on a placing surface 3d on the upper surface of a lower electrode 3 made of a conductive metal, with the protective tape 6a on the placing surface 3d side. When the wafer 6 is held by the lower electrode 3 by electrostatic attraction by impressing a DC voltage upon the electrode 3 from a DC power source section 18 for electrostatic attraction at the time of performing the plasma treatment, the protective tape 6a is utilized as a dielectric for electrostatic attraction. Consequently, the silicon wafer 6 can be held with sufficient electrostatic holding power, because the thickness of the can be reduced to the utmost. COPYRIGHT: (C)2004,JPO |
