发明名称 |
Radiation-emitting semiconductor chip |
摘要 |
The chip has a thin-film semiconductor body (2) including a semiconductor layer sequence with an active region (4) suitable for generating radiation. A reflector layer (5) is arranged on the body. The reflector layer and a Bragg reflector (6) are arranged on a same side of the active region. The Bragg reflector is monolithically integrated in the semiconductor layer sequence of the body. The reflector layer is arranged between a substrate (3) and the body. The reflector layer has a reflectivity of 95 percentage or above for the radiation to be generated in the active region. |
申请公布号 |
EP1770792(A2) |
申请公布日期 |
2007.04.04 |
申请号 |
EP20060016663 |
申请日期 |
2006.08.09 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
WIRTH, RALPH |
分类号 |
H01L33/10;H01L33/40;H01L33/46 |
主分类号 |
H01L33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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