发明名称 Radiation-emitting semiconductor chip
摘要 The chip has a thin-film semiconductor body (2) including a semiconductor layer sequence with an active region (4) suitable for generating radiation. A reflector layer (5) is arranged on the body. The reflector layer and a Bragg reflector (6) are arranged on a same side of the active region. The Bragg reflector is monolithically integrated in the semiconductor layer sequence of the body. The reflector layer is arranged between a substrate (3) and the body. The reflector layer has a reflectivity of 95 percentage or above for the radiation to be generated in the active region.
申请公布号 EP1770792(A2) 申请公布日期 2007.04.04
申请号 EP20060016663 申请日期 2006.08.09
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 WIRTH, RALPH
分类号 H01L33/10;H01L33/40;H01L33/46 主分类号 H01L33/10
代理机构 代理人
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