| 摘要 |
Process for manufacturing a non volatile memory device (1) integrated on semiconductor substrate (2) comprising a matrix (3) of memory cells with an associated circuitry (4), the process comprising the steps of:
- forming in the semiconductor substrate (2) dielectric insulation regions (7) of the matrix (3) so as to define and insulate from each other the active areas (5) of the matrix (3),
- forming in the semiconductor substrate (2) dielectric insulation regions (8) of the circuitry (4) so as to define and insulate from each other active areas (6) of the circuitry (4),
- forming at least one first dielectric layer (9) on the active areas (5, 6),
- depositing a first conductive layer (11) on the whole device (1),
- defining floating gate electrodes (13) of the memory cells of the matrix (3) in the first conductive layer (11),
- removing at least partially the first conductive layer (11) from the circuitry (4),
- carrying out a blanket etching on the whole device (1) to remove a surface portion of the dielectric insulation regions (7, 8) not shielded by said floating gate electrodes (13).
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