发明名称 |
VERTICAL STRUCTURE SEMICONDUCTOR DEVICES WITH IMPROVED LIGHT OUTPUT |
摘要 |
<p>The invention provides a reliable technique to fabricate a new vertical structure compound semiconductor devices with highly improved light output. An exemplary embodiment of a method of fabricating light emitting semiconductor devices comprising the steps of forming a light emitting layer, and forming an undulated surface over light emitting layer to improve light output. In one embodiment, the method further comprises the step of forming a lens over the undulated surface of each of the semiconductor devices. In one embodiment, the method of claim further comprises the steps of forming a contact pad over the semiconductor structure to contact with the light emitting layer, and packaging each of the semiconductor devices in a package including an upper lead frame and lower lead frame. Advantages of the invention include an improved technique for fabricating semiconductor devices with great yield, reliability and light output.</p> |
申请公布号 |
EP1769539(A2) |
申请公布日期 |
2007.04.04 |
申请号 |
EP20050764366 |
申请日期 |
2005.06.22 |
申请人 |
VERTICLE, INC. |
发明人 |
YOO, MYUNG CHEOL;KIM, DONG WOO;YEOM, GEUN YOUNG |
分类号 |
H01L33/20;H01L33/00;H01L33/22;H01L33/40;H01L33/62 |
主分类号 |
H01L33/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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