发明名称 Bi-directional double NMOS switch
摘要 A semiconductor switch comprises two NMOS transistors coupled in an anti-series arrangement, and a gate control circuit coupled to both gates of the NMOS transistors. Both drains of the NMOS transistors are interconnected, and the gate control circuit is coupled to the drains interconnection. The required chip area is halved compared to prior art switches. Pumping the gates to higher voltages may cause a further reduction of the sizes of the NMOS transistors. In addition, advantageously, a large range of input and output voltages can be allowed between the sources of the NMOS transistors, whereby the sources act as input and output respectively of the switch, thus allowing application of the switch in a broad technical field.
申请公布号 US7199640(B2) 申请公布日期 2007.04.03
申请号 US20050532922 申请日期 2005.04.27
申请人 DXP B.V. 发明人 DE CREMOUX GUILLAUME;VAN LOO INSUN;DIKKEN JAN;NIEUWHOFF FERRY;CHRISTOFOROU YOVGOS;KENC AYKUT;WILLEMSEN WILHELMUS JOHANNES REMIGIUS
分类号 H03K17/687;H03K17/06 主分类号 H03K17/687
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