发明名称 |
Diverse band gap energy level semiconductor device |
摘要 |
Hetero-structure semiconductor devices having first and second-type semiconductor junctions are disclosed. The hetero-structures are incorporated into pillar and rail-stack memory circuits improving the forward-to-reverse current ratios thereof.
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申请公布号 |
US7199418(B2) |
申请公布日期 |
2007.04.03 |
申请号 |
US20020254326 |
申请日期 |
2002.09.25 |
申请人 |
SAN DISK 3D LLC |
发明人 |
LEE THOMAS H. |
分类号 |
H01L27/108;G11C11/36;H01L23/525;H01L27/10;H01L29/165;H01L29/205;H01L29/267;H01L29/861 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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