发明名称 Pixel structure with improved charge transfer
摘要 An active pixel is described comprising a semiconductor substrate and a radiation sensitive source of carriers in the substrate, such as for instance, a photodiode. A non-carrier storing, carrier collecting region in the substrate is provided for attracting carriers from the source as they are generated. At least one doped or inverted region of a first conductivity is provided in or on the substrate for storing the carriers before read-out. At least one non-carrier storing, planar current flow, carrier transport pathway is provided from or through the carrier collecting region to the at least one doped or inverted region to transfer the carriers without intermediate storage to the read-out electronics.
申请公布号 US7199410(B2) 申请公布日期 2007.04.03
申请号 US20000736651 申请日期 2000.12.13
申请人 CYPRESS SEMICONDUCTOR CORPORATION (BELGIUM) BVBA 发明人 DIERICKX BART
分类号 H01L27/144;H01L27/146;H01L31/0352;H01L31/10 主分类号 H01L27/144
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