发明名称 Dual match line architecture for content addressable memories and other data structures
摘要 A dual match line circuit may include precharge logic configured to precharge each of a hit match line, a miss match line and an evaluate node to an asserted state, where a coupling device couples the hit and miss match lines to the evaluate node. The miss match line may discharge through a number of load devices that may be activated by respective miss signals. The hit match line may be additionally coupled to discharge through a pair of devices connected in series, one of which may be activated by a hit signal, and the other of which may be activated by the miss match line. The hit and miss match lines may be electrically isolated from one another, such that when any of the respective miss signals is asserted, current from the hit match line does not discharge through the miss match line.
申请公布号 US7200019(B1) 申请公布日期 2007.04.03
申请号 US20050141301 申请日期 2005.05.31
申请人 SUN MICROSYSTEMS, INC. 发明人 BHATIA AJAY;WANZAKHADE SANJAY M.;SHASTRY SHASHANK
分类号 G11C15/04;G06F12/00 主分类号 G11C15/04
代理机构 代理人
主权项
地址