发明名称 |
Advanced CMOS using super steep retrograde wells |
摘要 |
The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer ( 110 ) beneath the gate dielectric ( 50 ) and source and drain regions ( 80 ) of a MOS transistor. The carbon containing layer ( 110 ) will prevent the diffusion of dopants into the region ( 40 ) directly beneath the gate dielectric layer ( 50 ).
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申请公布号 |
US7199430(B2) |
申请公布日期 |
2007.04.03 |
申请号 |
US20060362908 |
申请日期 |
2006.02.28 |
申请人 |
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发明人 |
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分类号 |
H01L29/76;H01L21/265;H01L21/336;H01L21/8238;H01L29/10;H01L29/36;H01L29/786;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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