发明名称 |
Method for programming a charge-trapping nonvolatile memory cell by raised-Vs channel initialed secondary electron injection (CHISEL) |
摘要 |
A raised-Vs Channel Initialed Secondary Electron Injection is disclosed to program a charge-trapping nonvolatile memory cell. The source of the charge-trapping nonvolatile memory cell is applied with a positive source voltage, and the drain of the charge-trapping nonvolatile memory cell is applied with a positive drain voltage, wherein the positive drain voltage is greater than the positive source voltage. The substrate of the charge-trapping nonvolatile memory cell is grounded. A positive gate voltage is applied to the polysilicon gate of the charge-trapping nonvolatile memory cell.
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申请公布号 |
US7200045(B2) |
申请公布日期 |
2007.04.03 |
申请号 |
US20040026708 |
申请日期 |
2004.12.30 |
申请人 |
MACRONIX INTERNATIONAL COMPANY, LTD. |
发明人 |
LUE HANG-TING;HSIEH KUANG YEU |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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主权项 |
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地址 |
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