| 摘要 |
Each memory cell is composed of a storage layer ( 2 ) for storing therein information based on the magnetization state of a magnetic material, a magnetization fixed layer ( 4 ) provided on the storage layer ( 2 ) through an intermediate layer ( 3 ), a storage element ( 10 ) for applying an electric current in the laminating layer direction to change the direction of magnetization of the storage layer ( 2 ) thereby to record information on the storage layer ( 2 ) and a memory cell including a selection transistor, wherein a polarity which requires a large amount of electric current to record information and a polarity by which a large amount of saturation electric current can be supplied to the selection transistor are made coincident with each other. A size of each memory cell including the selection transistor can be decreased to the minimum by suppressing influences of asymmetric property of a write electric current and a memory can integrate the memory cells at a high density.
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