发明名称 Device with quantum dot layer spaced from delta doped layer
摘要 A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a layer of quantum dots disposed between adjacent layers of the device; and providing an auxiliary layer disposed in one of the adjacent layers, and spaced from the layer of quantum dots, the auxiliary layer being operative to communicate carriers with the layer of quantum dots.
申请公布号 US7199391(B2) 申请公布日期 2007.04.03
申请号 US20040843894 申请日期 2004.05.12
申请人 THE BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM 发明人 HOLONYAK, JR. NICK;DUPUIS RUSSELL
分类号 H01L31/0336;H01L29/12;H01L33/06;H01S5/34 主分类号 H01L31/0336
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