| 摘要 |
A process for the fabrication of a ferroelectric capacitor comprising depositing a layer of Ti 5 over an insulating layer 3 of Al<SUB>2</SUB>O<SUB>3</SUB>, and oxidising the Ti layer to form a TiO<SUB>2 </SUB>layer 7. Subsequently, a layer of PZT 9 is formed over the TiO<SUB>2 </SUB>layer 7. The PZT layer 9 is subjected to an annealing step in which, due to the presence of the TiO<SUB>2 </SUB>layer 7 it crystallises to form a layer 11 with a high degree of (111)-texture.
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