Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing

摘要

The present invention provides a method of manufacturing a metal silicide electrode ( 100 ) for a semiconductor device ( 110 ). The method comprises implanting small atoms into an nMOS semiconductor substrate ( 130 ) to a depth ( 132 ) no greater than about 30 nanometers into the nMOS semiconductor substrate. The method further comprises depositing a transition metal layer ( 400 ) over the nMOS semiconductor substrate. The transition metal layer and the nMOS semiconductor substrate are reacted to form the metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit ( 700 ).