MAGNETO-RESISTIVE ELEMENT, METHOD OF MANUFACTURING THE SAME AND MAGNETIC RANDOM ACCESS MEMORY

摘要

A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set by means of the C-shape of the ferroelectric layers so that an astroid curve in a hard axis direction opens.