| 摘要 |
An improved semiconductor device is disclosed with a NMOS transistor formed on a P-Well in a deep N-well, a PMOS transistor formed on a N-Well in the deep N-well, a first voltage coupled to a source node of the PMOS, and a second voltage higher than the first voltage coupled to the N-well, wherein the second voltage expands a depletion region associated with the PMOS and NMOS transistor for absorbing electrons and holes caused by alien particles.
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