发明名称 Integrated power amplifier arrangement
摘要 An integrated power amplifier arrangement with multistage construction is provided, in which a matching filter with integrated capacitance and inductance for impedance transformation is provided between an input transistor and an output transistor. In one example, the inductance of the matching filter is formed as a microstrip conductor, resulting in a significantly higher quality factor of the inductance and hence an improved linearity and an improved efficiency of the integrated power amplifier. The invention can advantageously be employed in particular in integrated transmitting arrangements.
申请公布号 US7199667(B2) 申请公布日期 2007.04.03
申请号 US20040950982 申请日期 2004.09.27
申请人 INFINEON TECHNOLOGIES AG 发明人 DONIG GUENTER;BAKALSKI WINFRIED;WOHLMUTH HANS-DIETER;KITLINSKI KRZYSZTOF
分类号 H03F3/04;H03F3/60;H03F1/02;H03F1/32;H03F1/56;H03F3/19;H03F3/195;H03F3/21;H03F3/213 主分类号 H03F3/04
代理机构 代理人
主权项
地址