发明名称 |
SEMICONDUCTOR MEMORY DEVICE WITH TRIPPLE WELL STRUCTURE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor memory device may include a semiconductor substrate that may have a first conductivity type. A first buried layer may be formed in the semiconductor substrate and may have a second conductivity type opposite to the first type conductivity. A first well may be formed on the first buried layer and may have the first type conductivity. A second well may be formed in the first well over a first surface portion of the first buried layer and may have the second conductivity type. A second buried layer may be formed in the first well and on a second surface portion of the first buried layer and may have the first conductivity type. A third well may be formed in the first well and on the second buried layer and may have the second conductivity type. |
申请公布号 |
KR100705336(B1) |
申请公布日期 |
2007.04.03 |
申请号 |
KR20060001355 |
申请日期 |
2006.01.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JUNG HWA;LEE, JAE YOUNG |
分类号 |
H01L27/06;H01L21/336 |
主分类号 |
H01L27/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|