发明名称 |
Method for fabricating semiconductor device capable of preventing damages to conductive structure |
摘要 |
Disclosed is a method for fabricating a semiconductor device with protected conductive structures. The method includes the steps of: forming a plurality of conductive structures on a substrate, each conductive structure including a conductive layer and a hard mask insulation layer formed on the conductive layer; forming a first insulation layer on the conductive structures; forming a plurality of plugs contacted to the substrate disposed between the conductive structures by passing through the first insulation layer and having a predetermined height corresponding to a height between the conductive layer and a top of the hard mask insulation layer; forming an attack barrier layer covering top and sidewalls of the hard mask insulation layer; forming a second insulation layer on the attack barrier layer; and selectively etching the second insulation layer to form a contact hole exposing at least one of the plugs.
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申请公布号 |
US7199051(B2) |
申请公布日期 |
2007.04.03 |
申请号 |
US20040880346 |
申请日期 |
2004.06.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE SUNG-KWON;LEE MIN-SUK |
分类号 |
H01L21/28;H01L21/44;H01L21/60;H01L21/768;H01L21/8242;H01L27/108;H01L29/06 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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