| 发明名称 |
Laser diode having an active layer containing N and operable in a 0.6 mum wavelength band |
| 摘要 |
An optical semiconductor device operable in a 0.6 mum band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less.
|
| 申请公布号 |
US7198972(B2) |
申请公布日期 |
2007.04.03 |
| 申请号 |
US20030428074 |
申请日期 |
2003.05.02 |
| 申请人 |
RICOH COMPANY, LTD. |
发明人 |
SATO SHUNICHI |
| 分类号 |
H01L21/00;C30B25/00;H01S5/183;H01S5/20;H01S5/323;H01S5/34;H01S5/343 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
