Plating-rinse-plating process for fabricating copper interconnects

摘要

An improved copper ECD process. After the copper seed layer ( 116 ) is formed, a first portion of copper film ( 118 ) is plated onto the surface of the seed layer ( 116 ). The surface of the first portion of the copper film ( 118 ) is then rinsed to equalize the organic adsorption on all sites to prevent preferential copper growth in dense areas. After rinsing, the remaining copper of the copper film ( 118 ) is electrochemically deposited.