| 摘要 |
A ferroelectric memory is provided including a ferroelectric capacitor having an end electrically coupled to a bit line; a power source generating a predetermined voltage; a resistance formed between the bit line and the power source; and a switch installed in series with the resistor, and switching whether a predetermined voltage is applied to the bit line via the resistor or not. The voltage source preferably generates a driving voltage driving the ferroelectric memory, a voltage between the resistive voltage of the ferroelectric capacitor and the driving voltage driving the ferroelectric memory, or a voltage that is less than the coercive voltage of the ferroelectric capacitor.
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