| 摘要 |
The nonvolatile semiconductor memory device comprises a channel region formed in a semiconductor substrate, a gate electrode formed over the channel region with a charge retaining insulating film interposed therebetween, a first pair of source/drain regions arranged in a first direction with the channel region formed therebetween, and a second pair of source/drain regions arranged in a second direction intersecting the first direction with the channel region formed therebetween. The channel region and the gate electrode are common between a first memory cell transistor including the first pair of source/drain regions and a second memory cell transistor including the second pair of source/drain regions.
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