发明名称 |
Solid-state imaging device and camera |
摘要 |
A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of a first conductivity type, a transistor and a device isolation region whose depth is less than a depth of the charge accumulation region of the first conductivity type, at which an impurity density is at maximum.
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申请公布号 |
US7199411(B2) |
申请公布日期 |
2007.04.03 |
申请号 |
US20040930814 |
申请日期 |
2004.09.01 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YOSHIDA SHINJI;MORI MITSUYOSHI;YAMAGUCHI TAKUMI |
分类号 |
H01L27/14;H01L31/062;H01L27/146;H01L31/10 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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