发明名称 |
Image sensor with surface regions of different doping |
摘要 |
A production method for an image sensor which is provided with a plurality of sensor portions arranged on a semiconductor substrate and each having a first photodiode constituted by a first region of a first conductivity type and a second region of a second conductivity type different from the first conductivity type and a second photodiode constituted by the second region and a third region of the first conductivity type. The method includes the steps of: forming a second region of the second conductivity type on a first region defined in a semiconductor substrate by epitaxial growth; and forming a third region of the first conductivity type on the second region by epitaxial growth.
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申请公布号 |
US7199412(B2) |
申请公布日期 |
2007.04.03 |
申请号 |
US20040878109 |
申请日期 |
2004.06.29 |
申请人 |
ROHM CO., LTD. |
发明人 |
SAWASE KENSUKE;MATSUMOTO YUJI;SAWA KIYOTAKA |
分类号 |
H01L27/146;H01L31/06;H01L27/14;H01L31/062;H01L31/10;H01L31/113;H04N5/335;H04N5/369;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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